FS10ASH-06 datasheet(1/4 Pages) MITSUBISHI

No de pièce	FS10ASH-06

Description	HIGH-SPEED SWITCHING USE

PDF	4 Pages

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Fabricant	MITSUBISHI [Mitsubishi Electric Semiconductor]

Site Internet	http://www.mitsubishichips.com

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1 / 4 page

Feb.1999

FS10ASH-06

OUTLINE DRAWING

Dimensions in mm

MP-3

MITSUBISHI Nch POWER MOSFET

FS10ASH-06

HIGH-SPEED SWITCHING USE

APPLICATION

Motor control, Lamp control, Solenoid control

DC-DC converter, etc.

60

±10

10

40

10

40

30

–55 ~ +150

0.26

VGS = 0V

VDS = 0V

L = 100

µH

Typical value

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche drain current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

V

A

W

°C

g

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

—

Symbol

MAXIMUM RATINGS (Tc = 25

°C)

Parameter

Conditions

Ratings

Unit

6.5

2.3

0.9MAX.

2.3

1.0

0.5

± 0.1

0.5

± 0.2

0.8

5.0

± 0.2

A

q GATE

w DRAIN

e SOURCE

r DRAIN

wr

q

qwe

r

e

¡2.5V DRIVE

¡VDSS .................................................................................. 60V

¡rDS (ON) (MAX) .............................................................. 73m

Ω

¡ID ......................................................................................... 10A

¡Integrated Fast Recovery Diode (TYP.) ............. 55ns

Numéro de pièce similaire - FS10ASH-06

Fabricant	No de pièce	Fiches technique	Description
Powerex Power Semicondu...	FS10ASH-06	43Kb / 4P	Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Renesas Technology Corp	FS10ASH-06	78Kb / 5P	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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Renesas Technology Corp	FS10ASH-06	98Kb / 7P	HIGH-SPEED SWITCHING USE

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FS10ASH-06 Fiches technique(PDF) 1 Page - Mitsubishi Electric Semiconductor

FS10ASH-06 Fiches technique(HTML) 1 Page - Mitsubishi Electric Semiconductor

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