MCP2003-ESLASHMD datasheet(14/32 Pages) MICROCHIP

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MCP2003/4

DS22230A-page 14

 2010 Microchip Technology Inc.

2.3

AC Specifications

AC CHARACTERISTICS

VBB = 6.0V to 27.0V; TA = -40°C to +125°C

Parameter

Sym

Min.

Typ.

Max.

Units

Test Conditions

Bus Interface – Constant Slope Time Parameters

Slope rising and falling

edges

tslope

3.5

—

22.5

µs

7.3V <= VBB <= 18V

Propagation Delay of

Transmitter

ttranspd

—

4.0

µs

ttranspd = max (ttranspdr or ttranspdf)

Propagation Delay of

Receiver

trecpd

—

6.0

µs

trecpd = max (trecpdr or trecpdf)

Symmetry of Propagation

Delay of Receiver rising

edge w.r.t. falling edge

trecsym

-2.0

—

2.0

µs

trecsym = max (trecpdf – trecpdr)

Symmetry of Propagation

Delay of Transmitter rising

edge w.r.t. falling edge

ttrans-

sym

-2.0

—

2.0

µs

ttranssym = max (ttranspdf - ttranspdr)

Time to sample of FAULT/

TXE for bus conflict reporting

tfault

—

32.5

µs

tfault = max (ttranspd + tslope + trecpd)

Duty Cycle 1 @20.0 kbit/sec

39.6

—

%tbit

Cbus;Rbus conditions:

1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W

THrec(max) = 0.744 x VBB,

THdom(max) = 0.581 x VBB,

VBB =7.0V-18V; tbit = 50 µs

D1 = tbus_rec(min) / 2 x tbit)

Duty Cycle 2 @20.0 kbit/sec

—

58.1

%tbit

Cbus;Rbus conditions:

1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W

THrec(max) = 0.284 x VBB,

THdom(max) = 0.422 x VBB,

VBB =7.6V-18V; tbit = 50 µs

D2 = tbus_rec(max) / 2 x tbit)

Duty Cycle 3 @10.4 kbit/sec

41.7

—

%tbit

Cbus;Rbus conditions:

1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W

THrec(max) = 0.778 x VBB,

THdom(max) = 0.616 x VBB,

VBB =7.0V-18V; tbit = 96 µs

D3 = tbus_rec(min) / 2 x tbit)

Duty Cycle 4 @10.4 kbit/sec

—

59.0

%tbit

Cbus;Rbus conditions:

1 nF; 1 kW | 6.8 nF; 660W | 10 nF; 500W

THrec(max) = 0.251 x VBB,

THdom(max) = 0.389 x VBB,

VBB =7.6V-18V; tbit = 96 µs

D4 = tbus_rec(max) / 2 x tbit)

Wake-up Timing

Bus Activity Debounce time

tBDB

µs

Bus debounce time, 10 µs typical

Bus Activity to Vren on

tBACTVE

150

µs

After Bus debounce time, 52 µs typical

WAKE to Vren on

tWAKE

150

µs

Chip Select to Vren on

tCSOR

—

150

µs

Vren floating

Chip Select to Vren off

tCSPD

—

µs

Vren floating

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