Fast recovery diode

RF2001T2D



Applications



Dimensions (Unit : mm)

 

Structure

General rectification



Features

1) Cathode common type.

(TO-220)

3) Very fast recovery

4) Low switching loss



Construction

Silicon epitaxial planar



Absoslute maximum ratings (Ta=25

C)

Symbol

Unit

V

V

Io

A

A

Tj

C

Tstg

C



Electrical characteristic (Ta=25

C)

Symbol

Min.

Typ.

Max.

Unit

-

0.87

0.93

V

Reverse current

-

0.01

10

μA

Reverse recovery time

trr

-

20

30

ns

Storage temoerature

-55 to +150

(*1)Business frequencies, Rating of R-load, Tc=113

C. 1/2 Io per diode

Conditions

20

Forward current surge peak (60Hz/1cyc)

100

Junction temperature

150

Parameter

Forward voltage

Parameter

Limits

Reverse voltage (repetitive peak)

200

Reverse voltage (DC)

200

Average rectified forward current (*1)

(1) (2) (3)

ROHM : ＴO220FN

①

Manufacture Date

1.2

1.3

0.8

(1) (2) (3)

10.0±0.3

　　　 0.1

2.8±0.2

　　　 0.1

4.5±0.3

　　　 0.1

0.7±0.1

0.05

2.6±0.5

①

1/3

2010.02 - Rev.D

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