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PSMN012-100YS Fiches technique(PDF) 1 Page - NXP Semiconductors |
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PSMN012-100YS Fiches technique(HTML) 1 Page - NXP Semiconductors |
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1 / 15 page ![]() PSMN012-100YS N-channel 100V 12m Ω standard level MOSFET in LFPAK Rev. 04 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 1.3 Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V ID drain current Tmb = 25 °C; see Figure 1 --60 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 130 W Tj junction temperature -55 - 175 °C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS =10V; Tj(init) =25°C; ID =60 A; Vsup ≤ 100 V; RGS =50 Ω; unclamped - - 170 mJ Dynamic characteristics QGD gate-drain charge VGS =10V; ID =45 A; VDS = 50 V; see Figure 14 and 15 -19 - nC QG(tot) total gate charge - 64 - nC |
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