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ACST830-8T Fiches technique(PDF) 3 Page - STMicroelectronics |
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ACST830-8T Fiches technique(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() ACST8 Characteristics Doc ID 7463 Rev 7 3/13 Table 4. Static characteristics Symbol Test conditions Value Unit VTM ITM = 11.3 A tp = 500 µs Tj = 25 °C Max 1.5 V VTO Threshold voltage Tj = 125 °C Max 0.9 V RD Dynamic resistance Tj = 125 °C Max 50 m Ω IDRM IRRM VOUT = VDRM / VRRM Tj = 25 °C Max 20 µA Tj = 125 °C 1 mA Table 5. Thermal resistances Symbol Parameter Value Unit Rth(j-a) Junction to ambient TO-220FPAB TO-220AB 60 °C/W Junction to ambient (soldered on 1 cm2 copper pad) D2PAK 45 Rth(j-c) Junction to case (AC) TO-220FPAB 3.6 TO-220AB, D2PAK 2 Figure 2. Maximum power dissipation versus on-state rms current Figure 3. On-state rms current versus case temperature (full cycle) P(W) 0 1 2 3 4 5 6 7 8 9 10 01 23 456 78 α=180 ° 180° I (A) T(RMS) I (A) T(RMS) 0 1 2 3 4 5 6 7 8 9 0 25 50 75 100 125 α=180° TO-220FPAB 220AB D2PACK TO- T (°C) C |
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