| Moteur de recherche de fiches techniques de composants électroniques |
|
L6563S Fiches technique(PDF) 14 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
L6563S Fiches technique(HTML) 14 Page - STMicroelectronics |
|
14 / 42 page ![]() Electrical characteristics L6563S 14/42 Doc ID 16116 Rev 3 RDISCH Internal discharge resistor TJ = 25 °C 7.5 10 12.5 k Ω 520 VVFF Linear operation range 0.8 3 V PWM_LATCH Ileak Low level leakage current VPWM_LATCH = 0 -1 µA VH High level IPWM_LATCH = -0.5 mA 4.5 V VH High level IPWM_LATCH = -0.25 mA Vcc = VccOff 2.5 V VH High level IPWM_LATCH = -0.25 mA Vcc = VccOff TJ = 25 °C 2.8 V Gate driver VOL Output low voltage Isink = 100 mA 0.6 1.2 V VOH Output high voltage Isource = 5 mA 9.8 10.3 V Isrcpk Peak source current -0.6 A Isnkpk Peak sink current 0.8 A tf Voltage fall time 30 60 ns tr Voltage rise time 45 110 ns VOclamp Output clamp voltage Isource = 5 mA; Vcc = 20 V 10 12 15 V UVLO saturation Vcc= 0 to VCCon, Isink = 2 mA 1.1 V 1. Parameters tracking each other 2. The multiplier output is given by: 3. Parameters tracking each other Table 4. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit ( ) 2 VFF V 5 . 2 COMP V MULT V K V cs V M CS_Ofst − ⋅ ⋅ + = |
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |