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FMMTH10 Fiches technique(PDF) 2 Page - Zetex Semiconductors

No de pièce FMMTH10
Description  NPN SILICON PLANAR RF TRANSISTOR
PDF  2 Pages
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FMMTH10 Fiches technique(HTML) 2 Page - Zetex Semiconductors

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SOT23 NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2 – NOVEMBER 1995
FEATURES
*High fT=650MHz
* Maximum capacitance 0.7pF
* Low noise < 5dB at 500MHz
PARTMARKING DETAIL –
3EZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
VCES
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3V
Continuous Collector Current
IC
25
mA
Peak Pulse Current
ICM
50
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
30
V
IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
25
V
IC=1mA, IB=0
Emitter-Base Breakdown
Voltage
V(BR)EBO
3V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=25V, IE=0
Emitter Cut-Off Current
IEBO
100
nA
VEB=2V,IC=0
Collector-Emitter Saturation
Voltage
VCE(sat)
0.5
V
IC=4mA, IB=0.4mA
Common Base Feedback
Capacitance
Crb
Typ.
0.45
0.65
pF
VCB=10V, IE=0
f=1MHz
Base-Emitter Turn-On
Voltage
VBE(on)
0.95
V
IC=4mA, VCE=10V
Static Forward Current
Transfer Ratio
hFE
60
IC=4mA, VCE=10V*
Transition Frequency
fT
650
MHz
IC=4mA, VCE=10V, f=100MHz
Collector Base Capacitance Ccb
0.7
pF
VCB=10V, IE=0, f=1MHz
Collector Base Time Constant rbCc
9ps
IC=4mA, VCB=10V, f=31.8MHz
Noise Figure
Nf
Typ.
3
5dB
IC=2mA, VCE=5V
f=500MHz,
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FMMTH10
C
B
E
SOT23
3 - 182
3 - 181
FMMTH10
100
50
0
150
200
100
TYPICAL CHARACTERISTICS
hFE v IC
IC-
(mA)
V+-=-10V
0.1
1
10
0.4
0.2
0
0.8
1.0
0.6
500
0
1500
1000
30
0 0.1
1
10
VCB-
(Volts)
1.2
CCBv VCB
fT v IC
V+-=10V
f=100MHz
175°C
100°C
25°C
-55°C
100
0.1
1
10
V+-=-10V
175°C
100°C
25°C
-55°C
IC-
(mA)
100
0.1
1
10
IC-
(mA)
1.0
0.8
0.6
0.4
0.2
VBE(on)v IC



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