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SSM9510GM Fiches technique(PDF) 5 Page - Silicon Standard Corp. |
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SSM9510GM Fiches technique(HTML) 5 Page - Silicon Standard Corp. |
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5 / 8 page ![]() www.SiliconStandard.com 5 of 8 SSM9510GM 2/10/2005 Rev.2.01 N-channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0 2 4 6 8 10 12 14 04 8 12 16 20 Q G , Total Gate Charge (nC) I D =5.7A V DS =16V 10 100 1000 10000 1 5 9 1317 2125 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Coss Crss 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1ms 10ms 100ms 1s 10s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135°C/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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