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SSM4565M Fiches technique(PDF) 7 Page - Silicon Standard Corp.

No de pièce SSM4565M
Description  COMPLEMENTARY N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  8 Pages
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Fabricant  SSC [Silicon Standard Corp.]
Site Internet  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM4565M Fiches technique(HTML) 7 Page - Silicon Standard Corp.

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SSM4565M/GM
12/10/2004 Rev.2.01
P-channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
0.0
10.0
20.0
30.0
40.0
50.0
Q G , Total Gate Charge (nC)
I D =-6A
V DS =-32V
100
1000
10000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse



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