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SSM2602GY Fiches technique(PDF) 4 Page - Silicon Standard Corp. |
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SSM2602GY Fiches technique(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page ![]() 11/16/2007 Rev.1.00 www.SiliconStandard.com 4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 2 4 6 8 10 12 14 0 5 10 15 20 25 Q G , Total Gate Charge (nC) I D =5.3A V DS =16V 10 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 156℃/W t T td(on) tr td(off) t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC T A =25 o C Single Pulse SSM2602GY |
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