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SSM75T10GP Fiches technique(PDF) 4 Page - Silicon Standard Corp. |
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SSM75T10GP Fiches technique(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page ![]() www.SiliconStandard.com 4 of 5 SSM75T10GP,S 2/16/2005 Rev.1.1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 Q G , Total Gate Charge (nC) V DS =50 V V DS =64 V V DS =80 V I D =30 A td(on) tr td(off) tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 131721 2529 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC |
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