HFS8N65S datasheet(3/7 Pages) SEMIHOW

No de pièce	HFS8N65S

Description	650V N-Channel MOSFET

PDF	7 Pages

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Fabricant	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,Sep 2009

GS, Gate-Source Voltage [V]

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

-1

150

∗ Note :

1. V

GS = 0V

2. 250

µs Pulse Test

SD, Source-Drain voltage [V]

0.5

1.0

1.5

2.0

2.5

GS = 20V

GS = 10V

∗ Note : T

J = 25

D, Drain Current [A]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

G, Total Gate Charge [nC]

DS = 130V

DS = 325V

DS = 520V

* Note : I

D=7.2A

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