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HFS7N60 Fiches technique(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS7N60 Fiches technique(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Dec 2005 V SD, Source-Drain Voltage [V] ※ Note : 1. VGS=0V 2. 250㎲ Pulse Test 150℃ 25℃ 0.2 0.4 0.6 0.8 1.0 1.2 1.4 101 100 10-1 I D, Drain Current [A] 5 4 3 2 1 0 0 5 10 15 20 25 V GS=20V V GS=10V ※ Note : T J=25℃ ※ Note : 1. VDS=40V 2. 250㎲ Pulse Test 150℃ 25℃ -55℃ 101 100 10-1 V GS, Gate-Source Voltage [V] 2 4 6 8 10 Typical Characteristics 10 -1 10 0 10 1 0 300 600 900 1200 1500 1800 2100 2400 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 4 8 12 16 20 24 28 32 36 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V * Note : I D = 7.0A Q G, Total Gate Charge [nC] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics V DS, Drain-Source Voltage [V] 101 100 10-1 ※ Note : 1. 250㎲ Pulse Test 2. TC=25℃ V Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottem 5.0V 10-1 100 101 |
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