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ES1F Fiches technique(PDF) 2 Page - Silicon Standard Corp. |
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ES1F Fiches technique(HTML) 2 Page - Silicon Standard Corp. |
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2 / 3 page ![]() 07/04/2007 Rev.1.00 www.SiliconStandard.com 2 ES1M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Notes: 1. Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied V R=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Area. r e t e m a r a Ps l o b m y S S E A 1 S E B 1 S E C 1 S E D 1 S E F 1 S E G 1 S E J 1 S E K 1 S E M 1 s t i n U e g a t l o v e s r e v e r k a e p e v i t i t e p e r m u m i x a MV M R R 0 50 0 10 5 10 0 20 0 30 0 40 0 60 0 80 0 0 1s t l o V e g a t l o v S M R m u m i x a MV S M R 5 30 75 0 10 4 10 1 20 8 20 2 40 6 50 0 7s t l o V e g a t l o v g n i k c o l b C D m u m i x a MV C D 0 50 0 10 5 10 0 20 0 30 0 40 0 60 0 80 0 0 1s t l o V t n e r r u c d e i f i t c e r d r a w r o f e g a r e v a m u m i x a M 1 . g i F e e S I ) V A ( 0 . 1p m A e l g n i s s m 3 . 8 , t n e r r u c e g r u s d r a w r o f k a e P d a o l d e t a r n o d e s o p m i r e p u s e v a w - e n i s f l a h ) d o h t e M C E D E J ( I M S F 0 . 0 3s p m A A 0 . 1 @ e g a t l o v d r a w r o f s u o e n a t n a t s n i m u m i x a MV F 5 9 . 03 . 17 . 1s t l o V t n e r r u c e s r e v e r C D m u m i x a M e g a t l o v g n i k c o l b C D d e t a r t a T @ A 5 2 = oC T @ A 0 0 1 = oC I R 0 . 5 0 0 1 uA uA ) 1 e t o N ( e m i t y r e v o c e r e s r e v e r m u m i x a Mt r r 5 3 nS ) 2 e t o N ( e c n a t i c a p a c n o i t c n u j l a c i p y TC J 0 18 pF ) 3 e t o N ( e c n a t s i s e r l a m r e h t l a c i p y T R θ A J R θ L J 5 8 5 3 o W / C e g n a r e r u t a r e p m e t n o i t c n u j g n i t a r e p OT J 0 5 1 + o t 5 5 - oC e g n a r e r u t a r e p m e t e g a r o t ST G T S 0 5 1 + o t 5 5 - oC |
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