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SD103CWS Fiches technique(PDF) 1 Page - Rectron Semiconductor |
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SD103CWS Fiches technique(HTML) 1 Page - Rectron Semiconductor |
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1 / 3 page ![]() SCHOTTKY DIODES RECTRON RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FEATURES * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection * Negligible Reverse Recovery Time * Low Reverse Capacitance MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.004 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SD103CWS SOD-323 MAXIMUM RATINGS (@TA=25 OC unless otherwise noted) RATINGS Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Maximum Forward Comtinuous Current RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current Maximum Power Dissipation Operating and Storage Temperature Range SYMBOL SD103CWS VRMR VRWR VR(RMS) VR IFM IFSM PD TJ,TSTG Volts Volts mAmps 350 1.5 200 -65 to + 125 Amps mW OC UNITS Thermal Resistance junction to ambient R θJA 300 OC/W 20 14 @t<1.0S Dimensions in inches and (millimeters) REF .019(0.46) .106(2.70) .098(2.50) .055(1.40) .047(1.20) .071(1.80) .063(1.60) MAX.039(1.00) .004(.10) .000(.00) ELECTRICAL CHARACTERISTICS ( @ TA = 25 oC unless otherwise noted ) Reverse voltage leakage current Reverse Breakdown Voltage Forward voltage (IF=200mA) (IF=20mA) Capacitance between terminals CHARACTERISTICS SYMBOL UNITS 5.0 0.37 0.60 - - - - µA V V pF IR V(BR)R VF CT MAX. - - 50 TYP. - 20 - - MIN. (VR=0V,f=1MHz) (VR=10V) (IR=10 µA) 2006-3 Reverse Recovery Time - ns trr 10 - (IF=IR=200mA,RL= 100 Ω,Irr=0.1xIR) |
Numéro de pièce similaire - SD103CWS |
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Description similaire - SD103CWS |
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