C1815 datasheet(1/2 Pages) RECTRON

No de pièce	C1815

Description	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

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Fabricant	RECTRON [Rectron Semiconductor]

Site Internet	http://www.rectron.com

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FEATURES

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

C1815

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

OC ambient temperature unless otherwise specified.

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(NPN)

2007-3

ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted )

Emitter cut-off current (VEB= 5V, IC=0)

DC current gain (VCE= 6V, IC= 2mA)

Collector cut-off current (VCB= 50V, IB=0)

Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)

Transition frequency (VCE= 10V, IC= 1mA, f= 30MHZ)

Base-emitter voltage (IC= 100mA, IB= 10mA)

CHARACTERISTICS

SYMBOL

UNITS

-

0.1

-

0.1

400

m

A

m

A

m

A

V

MHz

Collector-base breakdown voltage (IC= 100mA, IE=0)

Collector-emitter breakdown voltage (IC= 0.1mA, IB=0)

Collector cut-off current (VCB= 60V, IE=0)

CLASSIFICATION OF hFE(1)

RANK

Range

DEVICE MARKING

L

130 - 200

200 - 400

HF

V(BR)CBO

V(BR)CEO

IEBO

hFE(1)

ICBO

ICEO

VCE(sat)

VBE(sat)

fT

MAX

60

50

-

80

130

MIN

H

0.055(1.40)

0.047(1.20)

-

0.1

1

0.25

-

TYP

-

BASE

EMITTER

COLLECTOR

*

Power dissipation

PCM :

0.2

W (Tamb=25OC)

Collector current

ICM :

0.15

mA

Collector-base voltage

V(BR)CBO :

60

V

Operating and storage junction temperature range

TJ,Tstg: -55OC to +150OC

1

2

3

2

3

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".

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