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MS2553C

35 Watts, 50 Volts

Pulsed Avionics 1025 to 1150 MHz

GENERAL DESCRIPTION

The

MS2553C is a medium power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The device

has gold thin-film metallization and diffused ballasting for proven highest MTTF.

The transistor includes input prematch for broadband capability.

Low thermal

resistance package reduces junction temperature, extends life.

CASE OUTLINE

M220

(Common Base)

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25

°C (P

175 W (At rated pulse condition)

Voltage and Current

65 V

3.5 V

4.0 A

Temperatures

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX

UNITS

Emitter - Base Breakdown

Ie = 10mA

3.5

V

Collector - Base Breakdown

Ic = 20mA

65

V

Collector - Emitter Breakdown

Ic = 20mA

25

V

DC – Current Gain

Ic = 500mA, Vce = 5V

20

-

Thermal Resistance

0.5

°C/W

FUNCTIONAL CHARACTERISTICS @ 25°C, Vcc = 50V

Power Out

35

W

Power Input

3.2

W

Power Gain

10.5

dB

η

C

Collector Efficiency

40

%

Pulse Droop

1

dB

?á

Load Mismatch

F = 1025/1090/1150 MHz,

PW = 10

µsec, DF = 1%,

10:1

-

NOTES:

1. At rated output power and pulse conditions

2. Pulse Format: PW=10µs, DF=1%

Rev. A – May. 2008