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MP61001 Fiches technique(PDF) 2 Page - Microsemi Corporation |
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MP61001 Fiches technique(HTML) 2 Page - Microsemi Corporation |
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2 / 2 page ![]() MP61001 – MP61012 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GaAs PIN DIODES TM ® Copyright 2008 Rev: 2009-05-11 GaAs PIN Diodes (Packaged and Bondable Chips) Gallium Arsenide PIN Diodes (Specifications @ 25°C) Part Number Max. CJ @ -10 V1 (pf) Min. Breakdown Voltage (V) Max. Resistance @ 20 mA2 ( ) Nominal Switching Speed (ns) Nominal Carrier Lifetime3 (ns) MP61001 0.03 200 3.0 20.0 50 MP61002 0.04 200 3.0 20.0 50 MP61003 0.05 200 3.0 20.0 50 MP61004 0.06 100 2.0 9.0 15 MP61005 0.07 100 2.0 9.0 15 MP61006 0.08 100 2.0 9.0 15 MP61007 0.10 75 2.0 6.0 10 MP61008 0.12 75 2.0 6.0 10 MP61009 0.15 50 1.0 3.5 5 MP61010 0.18 50 1.0 3.5 5 MP61011 0.23 50 0.8 3.5 5 MP61012 0.35 50 0.8 3.5 5 1 Capacitance is specified at 1 MHz. 2 Resistance is specified at 1 GHz. 3 Carrier lifetime is inferred from stored charge measurement at 10 mA. Note: GaAs PIN diode chips have a minimum bonding area diameter of 50 microns. Typical Characteristics |
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