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GC9982 Fiches technique(PDF) 2 Page - Microsemi Corporation

No de pièce GC9982
Description  Schottky Barrier Diodes TM Ultra High Drive Monolithic
PDF  2 Pages
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

GC9982 Fiches technique(HTML) 2 Page - Microsemi Corporation

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GC9981 – GC9989
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
Schottky Barrier Diodes
Ultra High Drive Monolithic
TM
®
RoHS Compliant
.
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Model
1
Number
Barrier
Height
Freq
Range
VB(V)
2
IR=10μA
(Min)
CJ(pF)
3
@0V
(Max)
VF(mV)
@1 mA
(Max)
RD(Ω)
@10 mA
(Max)
NFSSB
(db)
4
(Typ)
GC9981
Ku-Ka
0.08
800
25
7
GC9982
X
0.12
780
20
6.5
GC9983
VERY
HIGH
C
4.0
0.15
750
15
6.5
GC9984
Ku-Ka
0.08
1050
25
7
GC9985
X
0.12
1000
20
6.5
GC9986
EXTRA
HIGH
C
5.0
0.15
950
15
6.5
GC9987
Ku-Ka
0.08
1300
25
7
GC9988
X
0.12
1250
20
6.5
GC9989
ULTRA
HIGH
C
6.0
0.15
1200
15
6.5
Notes
1. When ordering, specify appropriate package style.
IE: Order GC9981-8JR for Monolithic 8 Junction Ring Quad.
2. VB measured at 10µA on a sample basis only for ring quads.
3. 0 Volts, F=1 MHz (diagonal leads on quads).
4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz or 3 GHz
PACKAGE STYLE 8JR
PACKAGE STYLE 8JB
PACKAGE STYLE 1 29C
PACKAGE STYLE 1 74C
MORE PACKAGE STYLE AVAILABLE ON REQUEST
Copyright
 2007
Rev: 2009-01-19



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