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APTDC30H1201G Fiches technique(PDF) 2 Page - Microsemi Corporation |
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APTDC30H1201G Fiches technique(HTML) 2 Page - Microsemi Corporation |
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2 / 3 page ![]() APTDC30H1201G www.microsemi.com 2- 3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.6 1.8 VF Diode Forward Voltage IF = 30A Tj = 175°C 2.3 3.0 V Tj = 25°C 96 600 IRM Maximum Reverse Leakage Current VR = 1200V Tj = 175°C 168 3000 µA QC Total Capacitive Charge IF = 30A, VR = 600V di/dt =1500A/µs 120 nC f = 1MHz, VR = 200V 288 C Total Capacitance f = 1MHz, VR = 400V 207 pF Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal Resistance 0.63 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 175 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 °C Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com |
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