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PSII50/06 Fiches technique(PDF) 4 Page - Powersem GmbH

No de pièce PSII50/06
Description  IGBT Module
PDF  4 Pages
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Fabricant  POWERSEM [Powersem GmbH]
Site Internet  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSII50/06 Fiches technique(HTML) 4 Page - Powersem GmbH

  PSII50/06 Datasheet HTML 1Page - Powersem GmbH PSII50/06 Datasheet HTML 2Page - Powersem GmbH PSII50/06 Datasheet HTML 3Page - Powersem GmbH PSII50/06 Datasheet HTML 4Page - Powersem GmbH  
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 4 / 4 page
background image
tentative
data
sheet
product
still
under
development
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
0
40
80
120
0,0
2,5
5,0
7,5
10,0
0
25
50
75
100
0
40
80
120
0
1
2
3
4
0
100
200
300
400
0,00001 0,0001 0,001
0,01
0,1
1
10
0,0001
0,001
0,01
0,1
1
10
0
102030405060
0
1
2
3
0
200
400
600
0
10
20304050
60
1
2
3
4
20
40
60
80
single pulse
0
100
200
300
400
500
600
700
0
30
60
90
120
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
ZthJC
IGBT
V
A
mJ
ns
ns
mJ
42T60
42T60
42T60
42T60
42T60
V
CE = 300 V
V
GE = ±15 V
R
G = 22 Ω
T
VJ = 125°C
V
CE = 300 V
V
GE = ±15 V
I
C
= 50 A
T
VJ = 125°C
R
G = 22 Ω
T
VJ = 125°C
V
CE = 300 V
V
GE = ±15 V
I
C
= 50 A
T
VJ = 125°C
V
CE = 300 V
V
GE = ±15 V
R
G = 22 Ω
T
VJ = 125°C
VID...75-06P1
diode



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