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CLD340 Fiches technique(PDF) 2 Page - Clairex Technologies, Inc |
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CLD340 Fiches technique(HTML) 2 Page - Clairex Technologies, Inc |
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2 / 2 page ![]() Clairex Technologies, Inc. 1301 East Plano Parkway Plano, Texas 75074-8524 Phone: 972-265-4900 Fax: 972-265-4949 www.clairex.com CLD340 High Temperature AlGaAs Photodiode electrical characteristics at TA = 25°C (unless otherwise noted) symbol parameter min typ max units test conditions ISC Short-circuit current(3) 2.0 3.5 - µA VBIAS = 0V, Ee = 1mW/cm2 ID Dark current - 0.1 1.0 nA VR = 5V, Ee = 0 RS Shunt resistance - 3000 - Meg. Ω VR = 10mV VBR Reverse breakdown 20 - - V IR = 10µA Cj Junction capacitance - 170 - pF VBIAS = 0, f = 1MHz ΘHP Total angle at half sensitivity points - 70 - deg. tr, tf 0utput rise and fall time(3) - 1.0 - µs RL = 50Ω, VR = 5V note: 3. Radiation source is an aluminum gallium arsenide IRED with a peak emission wavelength of 850nm. Clairex Technologies, Inc. ® Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. |
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