UT3P01Z datasheet(1/4 Pages) UTC

No de pièce	UT3P01Z

Description	P CHANNEL POWER MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3P01Z

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-341..A

P CHANNEL POWER MOSFET

DESCRIPTION

The UT3P01Z uses UTC advanced technology to provide

excellent RDS (ON), low gate charge and operated with low gate

voltages. This device can be applied to general-purpose switching

devices applications.

FEATURES

* RDS(ON) = 8Ω @VGS = -4 V

* Ultra low gate charge ( typical 1.43 nC )

* Low reverse transfer capacitance ( CRSS = typical 1.8 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* Halogen Free

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UT3P01ZG-AL3-R

SOT-323

S

G

D

Tape Reel

UT3P01ZG-AN3-R

SOT-523

S

G

D

Tape Reel

MARKING

Numéro de pièce similaire - UT3P01Z

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	UT3P01Z	173Kb / 4P	P CHANNEL POWER MOSFET
Unisonic Technologies	UT3P01ZG-AE2-R	173Kb / 4P	P CHANNEL POWER MOSFET
VBsemi Electronics Co.,...	UT3P01ZG-AE2-R	1Mb / 7P	P-Channel 60 V (D-S) MOSFET
Unisonic Technologies	UT3P01ZG-AL3-R	173Kb / 4P	P CHANNEL POWER MOSFET
Unisonic Technologies	UT3P01ZG-AN3-R	173Kb / 4P	P CHANNEL POWER MOSFET

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Infineon Technologies A...	BSB027P03LX3G	1Mb / 13P	p-Channel Power MOSFET 1.9, 2011-03-02
Unisonic Technologies	UT3P01Z	173Kb / 4P	P CHANNEL POWER MOSFET
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UT3P01Z Fiches technique(PDF) 1 Page - Unisonic Technologies

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