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BL-R3132H Fiches technique(PDF) 2 Page - BRIGHT LED ELECTRONICS CORP

No de pièce BL-R3132H
Description  Chip material: GaAsP/GaP
PDF  2 Pages
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Fabricant  BRIGHT [BRIGHT LED ELECTRONICS CORP]
Site Internet  http://www.brightled.co.kr
Logo BRIGHT - BRIGHT LED ELECTRONICS CORP

BL-R3132H Fiches technique(HTML) 2 Page - BRIGHT LED ELECTRONICS CORP

  BL-R3132H Datasheet HTML 1Page - BRIGHT LED ELECTRONICS CORP BL-R3132H Datasheet HTML 2Page - BRIGHT LED ELECTRONICS CORP  
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T L
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Ver.1.0 Page 2 of 2
SINCE 1981
● Electrical and optical characteristics(Ta=25℃)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward Voltage
VF
IF=20mA
-
2.1
2.6
V
Luminous Intensity
Iv
IF=20mA
-
4.5
-
mcd
Reverse Current
IR
VR=5V
-
-
100
µA
Peak Wave Length
λp
IF=20mA
-
585
-
nm
Dominant Wave Length
λd
IF=20mA
582
-
595
nm
Spectral Line Half-width
Δλ
IF=20mA
-
35
-
nm
Viewing Angle
2
θ
1/2
IF=20mA
-
125
-
deg
● Typical electro-optical characteristics curves
vs. Ambient temperature
3.0
0
1.0
2.0
20
10
30
40
50
4.0
0
20
10
30
40
50
2
1
35
4
535
0
0.5
1.0
585
635
0.5
-40
0
-20
0
20
2.0
1.0
1.5
2.5
3.0
40
60
0
20
10
10
30
20
40
60
40
50
60
100
80
Forward current (mA)
Fig.5 Relative luminous intensity
vs. Forward current
Forward voltage(V)
0.7
0.9
0.8
1.0
0.5
0.3
0.1
0.2
70
90
80
0.4
0.6
50
60
40
Ambient temperature Ta()
℃
Fig.6 Radiation diagram
0
10
30
20
Fig.3 Forward current vs. Forward voltage
Fig.1 Relative intensity vs. Wavelength
Wavelength
λ (nm)
Fig.4 Relative luminous intensity
Fig.2 Forward current derating curve
vs. Ambient temperature
Ambient temperature Ta()
℃
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