LLSD103C datasheet(1/2 Pages) CHENYI

No de pièce	LLSD103C

Description	Schottky barrier switching diode

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Fabricant	CHENYI [Shanghai Lunsure Electronic Tech]

Site Internet	http://www.cnelectr.com

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Features

l Low Reverse Recovery Time

l Low Reverse Capacitance

l Low Forward Voltage Drop

l Guard Ring Construction for Transient Protection

Mechanical Data

l Case: MiniMELF, Glass

l Terminals: Solderable per MIL-STD-202, Method 208

l Polarity: Indicated by Cathode Band

l Weight: 0.05 grams ( approx.)

Maximum Ratings @ 25oC Unless Otherwise Specified

Characteristic

Symbol LLSD103A LLSD103B LLSD103C

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

40V

30V

20V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

28V

21V

14V

Forward Continuous Current(Note1)

IFM

Maximum Single cycle surge 60Hz

sine wave

IFSM

Power Dissipation(Note 1)

Pd

Thermal Resistance(Note 1)

R

Operation/Storage Temp. Range

Tj, TSTG

-55 to 150

o

C

15A

350mA

400mW

250K/W

Electrical Characteristics @ 25oC Unless Otherwise Specified

Charateristic

Symbol Min

Typ

Max

Test Cond.

Peak

LLSD103A

VR=30V

Reverse

LLSD103B

IRM

-----

5.0uA

VR=20V

Current

LLSD103C

VR=10V

Maximum Forward

VFM

-----

0.37V

IF=20mA

Voltage Drop

0.60V

IF=200mA

Junction Capacitance

Cj

-----

50

pF

VR=0V, f=1.0MHz

Reverse Recovery Time

trr

-----

10

ns

IF=IR=50mA to 200mA,

recover to 0.1 I R

Note: 1. Valid provided that electrodes are kept at ambient temperature

LLSD103A

THRU

LLSD103C

Schottky Barrier

Switching Diode

DIMENSION

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.134

.142

3.40

3.60

B

.008

.016

0.20

0.40

C

.055

.059

1.40

1.50

A

B

C

Cathode Mark

0.030”

0.105

0.075”

SUGGESTED SOLDER

PAD LAYOUT

www.cnelectr.com

MINIMELF

Shanghai Lunsure Electronic

Technology Co.,Ltd

Fax:0086-21-57152769

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