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TPC8041 Fiches technique(PDF) 3 Page - Toshiba Semiconductor

No de pièce TPC8041
Description  Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
PDF  7 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8041 Fiches technique(HTML) 3 Page - Toshiba Semiconductor

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TPC8041
2009-09-29
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
⎯
⎯
±100
nA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
10
⎯
⎯
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
⎯
2.5
V
VGS = 4.5 V, ID = 6.5 A
⎯
9
13.5
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 6.5 A
⎯
5.5
7
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6.5 A
13
26
⎯
S
Input capacitance
Ciss
⎯
1270
⎯
Reverse transfer capacitance
Crss
⎯
240
⎯
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
380
⎯
pF
Rise time
tr
⎯
11
⎯
Turn-ON time
ton
⎯
20
⎯
Fall time
tf
⎯
15
⎯
Switching time
Turn-OFF time
toff
Duty
≤ 1%, tw = 10 μs
⎯
39
⎯
ns
Total gate charge
(gate-source plus gate-drain)
Qg
⎯
27
⎯
Gate-source charge 1
Qgs1
⎯
4.2
⎯
Gate-drain (“miller”) charge
Qgd
VDD ≈ 24 V, VGS = 10 V, ID = 13 A
⎯
8.2
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
⎯
⎯
⎯
52
A
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
⎯
⎯
−1.2
V
VDD ≈ 15 V
0 V
VGS
10 V
ID = 6.5 A
VOUT



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