STM8L151C4T3 datasheet(89/101 Pages) STMICROELECTRONICS

89 / 101 page

STM8L151xx, STM8L152xx

Electrical parameters

Doc ID 15962 Rev 2

89/101

Figure 20.

Power supply and reference decoupling (VREF+ connected to VDDA)

8.3.14

EMC characteristics

Susceptibility tests are performed on a sample basis during product characterization.

Functional EMS (electromagnetic susceptibility)

Based on a simple running application on the product (toggling 2 LEDs through I/O ports),

the product is stressed by two electromagnetic events until a failure occurs (indicated by the

LEDs).

●

ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device

until a functional disturbance occurs. This test conforms with the IEC 61000 standard.

●

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test conforms

with the IEC 61000 standard.

A device reset allows normal operations to be resumed. The test results are given in the

table below based on the EMS levels and classes defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Prequalification trials:

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

VREF+/VDDA

STM8L

1 µF // 10 nF

VREF–/VSSA

ai17032

STM8L151C4T3 Fiches technique(PDF) 89 Page - STMicroelectronics