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MASWSS0100 Fiches technique(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASWSS0100 Fiches technique(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 3 page ![]() • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 GaAs SP3T 2.5 V High Power Switch 0.1 - 3.0 GHz Rev. V2 MASWSS0100 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • Low Voltage Operation: 2.5V • Low Harmonics: -70 dBc at +34 dBm & 1 GHz • Low Insertion Loss: 0.5 dB at 1 GHz • High Isolation: 20 dB at 2 GHz • 0.5 micron GaAs PHEMT Process • Supplied as Known Good Die Description M/A-COM’s MASWSS0100 is a GaAs PHEMT MMIC single pole three throw (SP3T) high power switch die. The MASWSS0100 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM, DCS and PCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control voltage. The MASWSS0100 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliabil- ity. Ordering Information 1 Part Number Product Description MASWSS0100-DIE Separated Die on Grip Ring 1 1. Die quantity varies. Pad Name Description V1 Control 1 RF1 RF Port 1 RF2 RF Port 2 V2 Control 2 RF3 RF Port 3 V3 Control 3 RFC Antenna/Common Port Pad Configuration Parameter Absolute Maximum Input Power +38 dBm Voltage ± 8.5 volts Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Absolute Maximum Ratings 2,3 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. Die Bond Pad Layout V1 V3 RFC RF1 RF2 V2 RF3 |
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