Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

MA4AGSW5 Fiches technique(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

No de pièce MA4AGSW5
Description  SP5T AlGaAs PIN Diode Switch RoHS Compliant
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  MA-COM [M/A-COM Technology Solutions, Inc.]
Site Internet  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MA4AGSW5 Fiches technique(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

  MA4AGSW5 Datasheet HTML 1Page - M/A-COM Technology Solutions, Inc. MA4AGSW5 Datasheet HTML 2Page - M/A-COM Technology Solutions, Inc. MA4AGSW5 Datasheet HTML 3Page - M/A-COM Technology Solutions, Inc. MA4AGSW5 Datasheet HTML 4Page - M/A-COM Technology Solutions, Inc. MA4AGSW5 Datasheet HTML 5Page - M/A-COM Technology Solutions, Inc. MA4AGSW5 Datasheet HTML 6Page - M/A-COM Technology Solutions, Inc. MA4AGSW5 Datasheet HTML 7Page - M/A-COM Technology Solutions, Inc.  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
SP5T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V3
MA4AGSW5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Electrical Specifications @ TA = 25°C, +/-10mA bias current
(On-wafer measurements)
RF PARAMETER
FREQUENCY
BAND
MAX
UNITS
PORT
BIAS
INSERTION LOSS
0.05 - 18 GHz
1.4
dB
J2 to J1
-10 mA @ J2, +10 mA @ J3, J4, J5, J6
18 - 50 GHz
1.9
dB
0.05 - 18 GHz
1.4
dB
J3 to J1
-10 mA @ J3, +10 mA @ J2, J4, J5, J6
18 - 50 GHz
1.9
dB
0.05 - 18 GHz
1.4
dB
J4 to J1
-10 mA @ J4, +10 mA @ J2, J3, J5, J6
18 - 50 GHz
1.9
dB
0.05 - 18 GHz
1.4
dB
J5 to J1
-10 mA @ J5, +10 mA @ J2, J3, J4, J6
18 - 50 GHz
1.9
dB
0.05 - 18 GHz
1.4
dB
J6 to J1
-10 mA @ J6, +10 mA @ J2, J3, J4, J5
18 - 50 GHz
1.9
dB
RF PARAMETER
FREQUENCY BAND
MIN
UNITS
PORT
BIAS
ISOLATION
*
0.05 - 18 GHz
35.0
dB
J2 to J1
-10 mA @ J6, +10 mA @ J3, J4, J5, J2
18 - 50 GHz
30.0
dB
0.05 - 18 GHz
35.0
dB
J3 to J1
-10 mA @ J6, +10 mA @ J2, J4, J5, J2
18 - 50 GHz
30.0
dB
0.05 - 18 GHz
35.0
dB
J4 to J1
-10 mA @ J6, +10 mA @ J2, J3, J5, J2
18 - 50 GHz
30.0
dB
0.05 - 18 GHz
35.0
dB
J5 to J1
-10 mA @ J6, +10 mA @ J2, J3, J4, J2
18 - 50 GHz
30.0
dB
0.05 - 18 GHz
35.0
dB
J6 to J1
-10 mA @ J2, +10 mA @ J2, J3, J4, J6
18 - 50 GHz
30.0
dB
RF PARAMETER
FREQUENCY BAND
MIN
UNITS
PORT
BIAS
INPUT/OUTPUT
RETURN LOSS
0.05 - 18 GHz
12.0
dB
J2 to J1
-10 mA @ J2, +10 mA @ J3, J4, J5, J6
18 - 50 GHz
12.0
dB
0.05 - 18 GHz
12.0
dB
J3 to J1
-10 mA @ J3, +10 mA @ J2, J4, J5, J6
18 - 50 GHz
12.0
dB
0.05 - 18 GHz
12.0
dB
J4 to J1
-10 mA @ J4, +10 mA @ J2, J3, J5, J6
18 - 50 GHz
12.0
dB
0.05 - 18 GHz
12.0
dB
J5 to J1
-10 mA @ J5, +10 mA @ J2, J3, J4, J6
18 - 50 GHz
12.0
dB
0.05 - 18 GHz
12.0
dB
J6 to J1
-10 mA @ J6, +10 mA @ J2, J3, J4, J5
18 - 50 GHz
12.0
dB
Parameter
F ( GHz )
RF Ports
Test Conditions
Typical
Value
Units
Switching Speed
*
( 10-90 % RF Voltage )
10.0
J1 to J2,J3,J4,J5,J6 +/- 5V TTL Compatible PIN Diode Driver
15
nS
*Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a +/- 5V TTL compatible
driver. Driver output parallel RC network uses a capacitor between 390 pF-560 pF and a resistor between 150-220 Ω ohms to
achieve 15 ns rise and fall times.
*Note: Isolation is measured through (3) diodes from common port ( input ) to selected output port with (1) opposite series
junction diode in low loss. Isolation for (2) diodes from common port ( Input ) to selected output with the same series junction
diode port in low loss = 22 dB Typical.



Html Pages

1 2 3 4 5 6 7


Fiches technique Télécharger

Go To PDF Page


Lien URL



ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Lien vers la fiche technique    |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com