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AS4LC4M4DG-7/XT Fiches technique(PDF) 4 Page - Austin Semiconductor |
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AS4LC4M4DG-7/XT Fiches technique(HTML) 4 Page - Austin Semiconductor |
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4 / 19 page ![]() 16 Me 16 Me 16 Me 16 Me 16 Meg FPM DRAM g FPM DRAM g FPM DRAM g FPM DRAM g FPM DRAM AS4LC4M4 AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice. 4 AS4LC4M4 Rev. 0.3 7/06 Austin Semiconductor, Inc. CAPACITANCE (f = 1MHz ; Vcc = 3.3V ±0.3V) ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS1,2 (-55oC<T A <+125oC & -40oC<T A <+85oC; Vcc = 3.3V ±0.3V; V IH /V IL = 2.0/0.8V; V OH /V OL = 2.0/0.8V) PARAMETER SYMBOL MAX UNITS Input capacitance (A0 - A11) CIN1 5pF Input capacitance (RAS\, CAS\, W\, OE\) CIN2 7pF Output capacitance (DQ0 - DQ3) CDQ 7pF MIN MAX MIN MAX tRC Random read or write cycle time 110 ns tRWC Read-modify-write cycle time 155 ns 3, 4, 10 tRAC Access time from RAS\ 60 ns 3, 4, 5 tCAC Access time from CAS\ 15 ns 3, 10 tAA Access time from column address 30 ns 3 tCLZ CAS\ to output in Low-Z 0 ns 6 tOFF Output buffer turn-off delay 0 15 ns 2 tT Transition time (raise and fall) 3 50 ns tRP RAS\ precharge time 40 ns tRAS RAS\ pulse width 60 10K ns tRSH RAS\ hold time 15 ns tCSH CAS\ hold time 60 ns tCAS CAS\ pulse width 15 10K ns tRCD RAS\ to CAS\ delay time 20 45 ns 4 tRAD RAS\ to column address delay time 15 30 ns 10 tCRP CAS\ to RAS\ precharge time 5 ns tASR Row address set-up time 0 ns tRAH Row address hold time 10 ns tASC Column address set-up time 0 ns tCAH Column address hold time 10 ns tRAL Column address to RAS\ lead time 30 ns tRCS Read command set-up time 0 ns tRCH Read command hold time referenced to CAS\ 0 ns 8 tRRH Read command hold time referenced to RAS\ 0 ns 8 tWCH Write command hold time 10 ns tWP Write command pulse width 10 ns tRWL Write command to RAS\ lead time 15 ns tCWL Write command to CAS\ lead time 15 ns UNITS NOTES SYMBOL PARAMETER -60 -70 |
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