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ISL73096RHX/SAMPLE Fiches technique(PDF) 3 Page - Intersil Corporation |
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ISL73096RHX/SAMPLE Fiches technique(HTML) 3 Page - Intersil Corporation |
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3 / 5 page ![]() 3 FN6475.2 March 23, 2009 Die Characteristics DIE DIMENSIONS: 52.8 mils x 52.0 mils x 14 mils ±1 mil 1340 μm x 1320µm x 355.6µm ±25.4µm INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4k Å ±0.5kÅ Top Metallization: Type: Metal 1: AlCu (2%)/TiW Thickness: Metal 1: 8k Å ±0.5kÅ Type: Metal 2: AlCu (2%) Thickness: Metal 2: 16k Å ±0.8kÅ Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION: Worst Case Current Density: 3.04 x 105A/cm2 Transistor Count: 5 Metallization Mask Layout FIGURE 1. ISL73096RH, ISL73127RH (1) Q1C (2) Q2C (3) Q2E (4) Q2B (5) NC (6) Q3C (7) Q3E (8) Q3B (9) Q4B (10) Q4E (11) Q4C (12) Q5C (13) Q5E (14) Q5B (15) Q1B (16) Q1E ISL73096RH, ISL73127RH, ISL73128RH |
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