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STP3N150 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STP3N150
Description  N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH??Power MOSFET
PDF  16 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP3N150 Fiches technique(HTML) 5 Page - STMicroelectronics

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STFV3N150, STFW3N150, STP3N150, STW3N150
Electrical characteristics
5/16
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 750 V, ID = 1.25 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
24
47
45
61
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
2.5
10
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 2.5 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 20)
410
2.4
11.7
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2.5 A, di/dt = 100 A/µs
VDD= 60 V, Tj = 150 °C
(see Figure 20)
540
3.3
12.3
ns
µC
A



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