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TPS9103 Fiches technique(PDF) 1 Page - Texas Instruments

No de pièce TPS9103
Description  POWER SUPPLY FOR GaAs POWER AMPLIFIERS
PDF  22 Pages
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

TPS9103 Fiches technique(HTML) 1 Page - Texas Instruments

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TPS9103
POWER SUPPLY FOR GaAs POWER AMPLIFIERS
SLVS131A – OCTOBER 1995 – REVISED JULY 1996
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Charge Pump Provides Negative Gate Bias
for Depletion-Mode GaAs Power Amplifiers
D Buffered Clock Output to Drive Additional
External Charge Pump
D 135-mΩ High-Side Switch Controls Supply
Voltage to the GaAs Power Amplifier
D Power-Good Circuitry Prevents High-Side
Switch Turn-on Until Negative Gate Bias is
Present
D Charge Pump Can Be Driven From the
Internal Oscillator or An External Clock
D 10-µA Maximum Standby Current
D Low-Profile (1.2-mm Max Height), 20-Pin
TSSOP Package
description
The TPS9103 is a highly integrated power supply for depletion-mode GaAs power amplifiers (PA) in cellular
handsets and other wireless communications equipment. Functional integration and low-profile packaging
combine to minimize circuit-board area and component height requirements. The device includes: a p-channel
MOSFET configured as a high-side switch to control the application of power to the PA; a driver for the high-side
switch with a logic-compatible input; a charge pump to provide negative gate-bias voltage; and logic to prevent
turn-on of the high-side switch until gate bias is present. The high-side switch has a typical on-state resistance
of 135 m
Ω.
The TPS9103 is available in a 20-pin thin shrink small-outline package (TSSOP) or in chip form. Contact factory
for die sales. The device operates over a junction temperature range of – 25
°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICE
CHIP FORM
TA
TSS0P
(PW)
CHIP FORM
(Y)
–25
°C to 85°C
TPS9103PWLE
TPS9103Y
The PW package is only available left-end taped and reeled
(indicated by the LE suffix on the device type).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
GATE_BIAS
VCC
C1–
C1+
BATT_IN
BATT_IN
BATT_IN
PGP
PG
GND
VDD
CLK
BCLK
GND
BATT_OUT
BATT_OUT
BATT_OUT
SW_EN
OSC_EN
EN
PW PACKAGE
(TOP VIEW)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
© 1996, Texas Instruments Incorporated


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