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TMS418160ADZ Fiches technique(PDF) 12 Page - Texas Instruments |
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TMS418160ADZ Fiches technique(HTML) 12 Page - Texas Instruments |
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12 / 24 page ![]() TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997 12 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 PARAMETER MEASUREMENT INFORMATION RAS UCAS LCAS Address W DQ0 – DQ15 OE Row Column Don’t Care Valid Data In tWC tRAS tRP tCAS tRCD tT tCP tCRP tRSH tRAH tASC tCAL tRAL tRAD tCAH tCWL tRWL tWP tDH tOED tOEH tDS tCLCH Don’t Care Don’t Care tASR (see Note A) Don’t Care Don’t Care Don’t Care tCSH (see Note C) NOTES: A. To hold the address latched by the first xCAS going low, the parameter tCLCH must be met. B. xCAS order is arbitrary. C. tCWL must be satisfied for each xCAS to write properly to each byte. Figure 4. Write-Cycle Timing |
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