Dated : 23/06/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
SD103A...SD103C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD103A, B, C is a metal on silicon Schottky barrier
device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications. Other uses are for click suppression,
efficient full wave bridges in telephone subsets, and as
blocking diodes in rechargeable low voltage battery
system.
This diode is also available in MiniMELF case with type
designation LL103A, B, C.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
SD103A
SD103B
SD103C
VRRM
40
30
20
V
Power Dissipation
Ptot
400
1)
mW
Single Cycle Surge 60 Hz Sine Wave
IFSM
15
A
Junction Temperature
Tj
125
O
C
Storage Temperature Range
TS
- 55 to + 175
O
C
1) Valid provided the leads direct at the case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter
Symbol
Typ.
Max.
Unit
Forward Voltage
at IF = 20 mA
at IF = 200 mA
VF
VF
-
-
0.37
0.6
V
V
Reverse Leakage Current
at VR = 30 V
at VR = 20 V
at VR = 10 V
SD103A
SD103B
SD103C
IR
-
5
µA
Junction Capacitance
at VR = 0 V, f = 1 MHz
Ctot
50
-
pF
Reverse Recovery Time
at IF = IR = 5 mA to 200 mA , recover to 0.1 IR
trr
10
-
ns
Max. 3.9
Max. 1.9
Glass Case DO-35
Max. 0.5
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
ST
"ST" Brand
Dimensions in mm
Black
Black
Black
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