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Dated : 07/02/2003
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
LL352
SILICON EPITAXIAL PLANAR DIODE
Features
•
Small package
•
Low forward voltage
•
Fast reverse recovery time
•
Small total capacitance
Applications
Extreme fast switches
Absolute Maximum Ratings (Tj = 25
OC)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
85
V
Reverse Voltage
VR
80
V
Maximum Peak Forward Current
IFM
200
mA
Surge Current (10ms)
IFSM
1
A
Average Forward Current
Io
100
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
125
OC
Storage Temperature Range
Ts
-55 … +125
OC
Characteristics at Tj = 25
OC
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IF = 1mA
VF
-
0.62
-
V
IF = 10mA
VF
-
0.75
-
V
Forward Voltage
IF = 100mA
VF
-
0.98
1.2
V
VR = 30V
IR
-
-
0.1
μA
Reverse Current
VR = 80V
IR
-
-
0.5
μA
Total Capacitance
VR = 0, f = 1MHZ
CT
-
0.5
3
pF
Reverse Recovery Time
IF = 10mA
trr
-
1.6
4
ns
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