1 / 1 page

Dated : 11/11/2006
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BFS20
NPN Silicon Epitaxial Planar Transistor
High frequency transistor for IF and VHF applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
4
V
Collector Current
IC
25
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 10 V, IC = 7 mA
hFE
40
-
140
-
Collector Cutoff Current
at VCB = 20 V
ICBO
-
-
100
nA
Emitter Cutoff Current
at VEB = 4 V
IEBO
-
-
100
µA
Base Emitter Voltage
at VCE = 10 V, IC = 7 mA
VBE
-
-
0.9
V
Transition Frequency
at VCE = 10 V, IC = 5 mA, f = 100 MHz
fT
275
450
-
MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
COB
-
1
pF
SOT-23 Plastic Package