BC337 datasheet(1/3 Pages) SECOS

No de pièce	BC337

Description	NPN Plastic-Encapsulate Transistors

PDF	3 Pages

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

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BC337/BC338

NPN Plastic-Encapsulate Transistors

http://www.SeCoSGmbH.com

Elektronische Bauelemente

FEATURES

Power dissipation

PCM : 0.625

W（Tamb=25℃）

Collector current

ICM :

0.8

A

Collector-base voltage

V(BR)CBO : BC337 50

V

Operating and storage junction temperature range

TJ，Tstg:-55℃ to +150℃

1 2

TO-92

1. COLLECTOR

2. BASE

.

EMITTER

1

2

3

.

BC338 30

ELECTRICAL

CHARACTERISTICS (Tamb=25

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BC337

BC338

VCBO

Ic= -100µA , IE=0

50

30

V

Collector-emitter breakdown voltage

BC337

BC338

VCEO

IC= -10 mA , IB=0

45

25

V

Emitter-base breakdown voltage

VEBO

IE= -10µA, IC=0

5

V

Collector cut-off current

BC337

BC338

ICBO

VCB= -45V, IE=0

VCB= -25V, IE=0

0.1

µA

Collector cut-off current

BC337

BC338

ICEO

VCE= -40V, IB=0

VCE= -20 V, IB=0

0.2

µA

Emitter cut-off current

IEBO

VEB= -4 V, IC=0

0.1

µA

hFE(1)

VCE=-1V, IC= -100mA

100

630

DC current gain

hFE(2)

VCE=-1V, IC= -300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=-500 mA, IB= -50 mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= -500 mA, IB=-50 mA

1.2

V

Transition frequency

f T

VCE= -5V, IC= -10mA

f = 100MHz

210

MHz

hFE CLASSIFICATION

Classification

16

25

40

hFE1

100-250

160-400

250-630

28-Jun-2007 Rev. A

Page

1 of 3

Base-emitter voltage

VBE

VCE=1V, IC= 300mA

1.2

V

Collector Output Capacitance

Cob

VCB=10V,IE=0

f=1MHZ

15

pF

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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