2SA1213 datasheet(1/3 Pages) SECOS

No de pièce	2SA1213

Description	PNP Silicon Medium Power Transistor

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Fabricant	SECOS [SeCoS Halbleitertechnologie GmbH]

Site Internet	http://www.secosgmbh.com

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2SA1213

PNP Silicon

Medium Power Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

*Features

Symbol

A

b

b1

c

D

D1

E

E1

e

e1

L

Min

1.400

0.320

0.360

0.350

4.400

1.400

2.300

3.940

2.900

0.900

Max

1.600

0.520

0.560

0.440

4.600

1.800

2.600

4.250

3.100

1.100

Min

0.055

0.013

0.014

0.173

0.055

0.091

0.155

0.114

0.035

Max

0.063

0.020

0.022

0.017

0.181

0.071

0.102

0.167

0.122

0.043

Dimensions In Millimeters

Dimensions In Inches

0.060TYP

1.500TYP

D

D1

C

A

b

b1

e

e1

SOT-89

1.BASE

2.COLLECTOR

3.EMITTER

ELECTRICAL

CHARACTERISTICS

Tamb=25

¥

unless

otherwise

specified

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-100μA ， IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10mA , IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA， IC=0

-5

　　V

Collector cut-off current

ICBO

VCB=-50 V , IE=0

-0.1

　μA

Emitter cut-off current

IEBO

VEB=-5 V ,

IC=0

-0.1

　μA

hFE 1

VCE=-2V, IC= -0.5A

70

240

DC current gain

hFE 2

VCE=-2V, IC=-2A

20

Collector-emitter saturation voltage

VCEsat

IC=-1A, IB= -0.05A

-0.5

V

Base-emitter saturation voltage

VBEsat

IC=-1A, IB= -0.05A

-1.2

V

Transition frequency

f T

VCE= -2V, IC=-0.5A

100

MHz

CLASSIFICATION OF hFE

Ｏ　

Ｙ　

７０－１４０　

１２０－２４０　

Marking

NO、NY

Low power dissipation 0.5W

*Stucture

Epitaxial planar type.

PNP silicon transistor.

Collector Current -2A

01-Jun-2002 Rev. A

Page 1 of 3

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