BAV300 datasheet(2/6 Pages) VISHAY

2 / 6 page

www.vishay.com

Document Number 85545

Rev. 1.9, 07-Mar-06

BAV300 / 301 / 302 / 303

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction to ambient air

mounted on epoxy-glass hard

tissue, Fig. 4

35 µm copper clad, 0.9 mm2

copper area per electrode

RthJA

500

K/W

Junction temperature

175

°C

Storage temperature range

Tstg

- 65 to + 175

°C

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 100 mA

1000

Reverse current

VR = 50 V

BAV300

100

VR = 100 V

BAV301

100

VR = 150 V

BAV302

100

VR = 200 V

BAV303

100

Tj = 100 °C, VR = 50 V

BAV300

µA

Tj = 100 °C, VR = 100 V

BAV301

µA

Tj = 100 °C, VR = 150V

BAV302

µA

Tj = 100 °C, VR = 200V

BAV303

µA

Breakdown voltage

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

BAV300

V(BR)

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

BAV301

V(BR)

120

BAV302

V(BR)

200

BAV303

V(BR)

250

Diode capacitance

VR = 0, f = 1 MHz

1.5

Differential forward resistance

IF = 10 mA

Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100 Ω

trr

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