BAV103 datasheet(2/5 Pages) VISHAY

2 / 5 page

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Document Number 85542

Rev. 1.6, 13-Feb-07

BAV100/101/102/103

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction lead

RthJL

350

K/W

Thermal resistance junction to ambient air

on PC board

50 mm x 50 mm x 1.6 mm

RthJA

500

K/W

Junction temperature

175

°C

Storage temperature range

Tstg

- 65 to + 175

°C

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 100 mA

1000

Reverse current

VR = 50 V

BAV100

100

VR = 100 V

BAV101

100

VR = 150 V

BAV102

100

VR = 200 V

BAV103

100

Tj = 100 °C, VR = 50 V

BAV100

µA

Tj = 100 °C, VR = 100 V

BAV101

µA

Tj = 100 °C, VR = 150 V

BAV102

µA

Tj = 100 °C, VR = 200 V

BAV103

µA

Breakdown voltage

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

BAV100

V(BR)

IR=100 µA, tp/T = 0.01,

tp = 0.3 ms

BAV101

V(BR)

120

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

BAV102

V(BR)

200

BAV103

V(BR)

250

Diode capacitance

VR = 0, f = 1 MHz

1.5

Differential forward resistance

IF = 10 mA

Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100 Ω

trr

Figure 1. Reverse Current vs. Junction Temperature

040

120

160

0.01

0.1

1000

Tj -Junction Temperature (°C)

200

94 9084

100

Scattering Limit

R = VRRM

Figure 2. Forward Current vs. Forward Voltage

0.4

0.8

1.2

1.6

0.1

100

1000

VF - Forward Voltage (V)

2.0

94 9085

Scattering Limit

j = 25 °C

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