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2SB634 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SB634
Description  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB634 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB634
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-10
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn


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