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2SD1158 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SD1158
Description  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1158 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SD1158 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1158 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SD1158 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SD1158 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1158
DESCRIPTION
·With TO-220 package
·High speed switching
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC converters
·Solid state relay
·General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
8
A
IB
Base current
2
A
PC
Collector power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.25
℃/W


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