2SD313 datasheet(1/3 Pages) ISC

No de pièce	2SD313

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD313

DESCRIPTION

·

·With TO-220C package

·Complement to type 2SB507

·Low collector saturation voltage

APPLICATIONS

·Designed for the output stage of 15W

to 25W AF power amplifier

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

60

V

VCEO

Collector-emitter voltage

Open base

60

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current (DC)

3

A

ICM

Collector current-Peak

8

A

IB

B

Base current

1

A

PC

Collector dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-50~150

℃

THERMAL CHARACTERISTICS

SYMBOL

CHARACTERISTICS

MAX

UNIT

Rθjc

Thermal resistance junction to case

4.16

℃/W

Numéro de pièce similaire - 2SD313

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	2SD313	115Kb / 3P	POWER TRANSISTORS(3A,60V,30W)
Wing Shing Computer Com...	2SD313	30Kb / 1P	NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
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Unisonic Technologies	2SD313	49Kb / 4P	NPN EPITAXIAL PLANAR TRANSISTOR
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