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2SC5143 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5143 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5143 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=400mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.5A 0.9 1.2 V ICBO Collector cut-off current VCB=1700V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 83 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 25 hFE-2 DC current gain IC=6A ; VCE=5V 4 8.5 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 185 pF VF Diode forward voltage IF=6A 1.8 V fT Transition frequency IE=0.1A ; VCE=10V 2 MHz Switching times (inductive load) ts Storage time 4 6 μs tf Fall time ICP=5A;IB1(end) =1A fH=31.5kHz 0.2 0.5 μs |
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