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2SC4430 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SC4430
Description  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4430 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC4430 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4430 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC4430 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SC4430 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC4430
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
1100
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE=∞
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=6A;IB=1.2A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=6A;IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
10
40
hFE-2
DC current gain
IC=4A ; VCE=5V
8
fT
Transition frequency
IC=0.8A ; VCE=10V
15
MHz
COB
Output capacitance
VCB=10V;f=1MHz
215
pF
Switching times
ton
Turn-on time
0.5
μs
tstg
Storage time
3.0
μs
tf
Fall time
IC=8A;RL=50Ω
IB1=1.6A;- IB2=3.2A
VCC=400V
0.3
μs
hFE-1 classifications
K
L
M
10-20
15-30
20-40



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