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2SC2022 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2022 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2022 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V ICBO Collector cut-off current VCB=300V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=200m A ; VCE=4V 30 fT Transition frequency IC=100mA ; VCE=12V 10 MHz |
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