2N6053 datasheet(1/3 Pages) ISC

No de pièce	2N6053

Description	Silicon PNP Power Transistors

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6053 2N6054

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·DARLINGTON

·Complement to type 2N6055;2N6056

APPLICATIONS

·General-purpose power amplifier and low

frequency swithing applications

PINNING (See Fig.2)

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6053

-60

VCBO

Collector-base voltage

2N6054

Open emitter

-80

V

2N6053

-60

VCEO

Collector-emitter voltage

2N6054

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-8

A

ICM

Collector current-peak

-16

A

IB

Base current

-120

mA

PD

Total Power Dissipation

TC=25℃

100

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.75

℃/W

DESCRIPTION

1

Base

2

Emitter

3

Collector

Fig.1 simplified outline (TO-3) and symbol

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