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STS3621 Fiches technique(PDF) 4 Page - SamHop Microelectronics Corp. |
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STS3621 Fiches technique(HTML) 4 Page - SamHop Microelectronics Corp. |
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4 / 11 page ![]() E LE C TR IC AL C HAR AC TE R IS TIC S (TA=25 C unless otherwise noted) Notes c.Guaranteed by design, not subject to production testing. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. F igure 2. Trans fer C haracteris tics ID, Drain C urrent (A) V G S , G ate-to-S ource Voltage (V ) 4 S T S 3621 90 75 60 45 30 15 1 20 16 12 8 0 0 0.9 1.8 2.7 3.6 4.5 5.4 F igure 1. Output C haracteris tics V DS , Drain-to-S ource Voltage (V ) 20 16 12 8 4 0 0 0.5 1 1.5 2 2.5 3 V GS =5V V GS =3V V GS =10V V GS =4.5V F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 4 8 12 16 20 1 V GS =10V V GS =4.5V 4 T j=125 C -55 C V GS =4V a.S urface Mounted on FR 4 Board, t <=10sec. Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS = 0V, Is =1.25A N-Ch 0.81 1. 2 -0.8 -1.2 VGS = 0V, Is =-1.25A P-Ch V b C V GS =3.5V N-Channel 25 C F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 1.5 1.4 1.3 1.2 1.1 1.0 0.9 -25 0 25 50 150 T j( C ) 125 75 100 V G S =10V ID=3A T j, J unction T emperature ( C ) V G S =4.5V ID=2A |
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