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2N5240 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2N5240
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5240 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistor
2N5240
DESCRIPTION
·High Voltage-
: VCEO(SUS)= 300V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in series regulators, power amplifiers,
inverters, deflection circuits,
switching regulators, and
high-voltage bridge amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
375
V
VCER(SUS)
Collector-Emitter Voltage
RBE≤50Ω
350
V
VCEO(SUS)
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current
2
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.75
℃/W


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